BTB772SA3_06 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C817A3-R
Issued Date : 2003.05.31
Revised Date:2006.05.15
Page:2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
-50
-50
-5
-
-
-
-
-
-
100
160
160
100
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-100μA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-50μA, IC=0
-
-1
μA VCB=-40V, IE=0
-
-1
μA VCE=-30V, IB=0
-
-1
μA VEB=-5V, IC=0
-
-0.3
V
IC=-400mA, IB=-20mA
-0.3
-0.5
V
IC=-2A, IB=-0.1A
-1
-2
V
IC=-2A, IB=-0.2A
-
-
-
VCE=-2V, IC=-20mA
-
-
-
VCE=-2V, IC=-100mA
-
500
-
VCE=-2V, IC=-500mA
-
-
-
VCE=-2V, IC=-1A
80
-
MHz VCE=-5V, IC=-0.1A, f=100MHz
55
-
pF VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 3
Rank
Range
P
160~320
E
250~500
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
100
1000 10000
Collector current---IC(mA)
BTB772SA3
C-E saturation voltage vs Collector current
10000
1000
100 _IC=40IB
10
IC=10IB
IC=20IB
1
1
10
100
1000
Collector current---IC(mA)
10000
CYStek Product Specification