BTB772AT3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C240T3
Issued Date : 2017.04.05
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25°C
Power Dissipation @TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
Unit
-50
V
-30
V
-7
V
-3
A
-5 (Note 1)
A
1
W
10
W
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Single Pulse , Pw=10ms
Symbol
RθJC
RθJA
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
Typ.
-50
-
-30
-
-7
-
-
-
-
-
-
-0.05
-
-0.2
-
-1
160
-
180
-
150
-
-
190
-
33
Max.
-
-
-
-100
-100
-0.2
-0.3
-1.2
-
390
-
-
-
Unit
V
V
V
nA
nA
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-400mA, IB=-20mA
IC=-2A, IB=-100mA
IC=-2A, IB=-200mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-10V, IC=-0.5A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTB772AT3
CYStek Product Specification