BTB1590S3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – Low VCESAT PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C313S3
Issued Date : 2015.08.28
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note : Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-40
-25
-6
-1.5
-3 (Note)
200
625
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
VBE(ON)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-6
-
-
-
-
-
-
120
80
-
-
Typ.
-
-
-
-
-
-
-0.21
-
-
-
-
270
12
Max.
-
-
-
-100
-100
-0.3
-0.4
-0.5
-1
390
-
-
-
Classification Of hFE 1
Rank
Range
Q
120~270
R
180~390
Unit
V
V
V
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-400mA, IB=-20mA
IC=-500mA, IB=-50mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-800mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTB1590S3
CYStek Product Specification