BTB1412J3_09 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-30
-6
-
-
-
180
-
-
Typ.
Max.
Unit Test Conditions
-
-
V
IC=-50μA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-50μA, IC=0
-
-0.5
μA VCB=-25V, IE=0
-
-0.5
μA VEB=-5V, IC=0
-
-0.5
V
IC=-4A, IB=-0.1A
-
390
-
VCE=-2V, IC=-0.5A
120
-
MHz VCE=-6V, IC=-50mA, f=30MHz
60
-
pF VCB=-20V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTB1412J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
B1412
BTB1412J3
CYStek Product Specification