BTB1238AM3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Silicon PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C849M3
Issued Date : 2010.10.28
Revised Date : 2013.10.31
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦300μs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm
Limits
-240
-240
-7
-1
-2 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
-240
-240
-7
-
-
-
-
-
-
120
60
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-100
-100
-0.3
-3
-1.1
-0.9
400
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-240V, IE=0
VEB=-7V, IC=0
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTB1238AM3
CYStek Product Specification