BTB1236AE3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Silicon PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C854E3
Issued Date : 2004.07.28
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-180
-
-
V
IC=-50µA, IE=0
BVCEO
-160
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-50µA, IC=0
ICBO
-
-
-1
µA VCB=-160V, IE=0
IEBO
-
-
-1
µA VEB=-4V, IC=0
*VCE(sat)
-
-
-0.6
V
IC=-1A, IB=-100mA
*VBE(on)
-
-
-1.5
V
VCE=-5V, IC=-150mA
hFE1
60
-
200
-
VCE=-5V, IC=-100mA
hFE2
30
-
-
-
VCE=-5V, IC=-500mA
fT
-
140
-
MHz VCE=-5V, IC=-150mA
Cob
-
27
-
pF VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
K
60~120
P
82~190
Q
120~200
BTB1236AE3
CYStek Product Specification