BTB1205I3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date :
Page No. : 2/ 5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Pd
Tj
Tstg
Limits
Unit
-25
V
-20
V
-5
V
-5
-8 (Note 1)
A
-0.5
A
1
W
10
150
°C
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-25
-
BVCEO
-20
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-380
*VBE(sat)
-
-1.0
*hFE
190
-
*hFE
60
-
fT
-
320
Cob
-
60
Max.
-
-
-
-0.5
-0.5
-500
-1.3
380
-
-
-
Unit
V
V
V
µA
µA
mV
V
-
-
MHz
pF
Test Conditions
IC=-10µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-60mA
IC=-3A, IB=-60mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
VCE=-5V, IC=-200mA, f =100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTB1205I3
CYStek Product Specification