BTB1198K3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C824K3
Issued Date : 2008.10.31
Revised Date :2013.10.09
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-120
-100
-5
-1
-2 (Note)
900
139
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE
fT
Cob
Min.
-120
-100
-5
-
-
-
-
-
-
120
-
-
Typ.
-
-
-
-
-
-0.16
-0.3
-
-
-
200
11
Max.
-
-
-
-100
-100
-0.5
-0.5
-1.2
-0.75
560
-
-
Unit
V
V
V
nA
nA
V
V
V
V
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-100V
VEB=-4V
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-50mA
VCE=-5V, IC=-5mA
VCE=-5V, IC=-200mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTB1198K3
CYStek Product Specification