BTB1197N3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Saturation PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C314N3
Issued Date : 2005.04.20
Revised Date :
Page No. : 2/ 5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note: 1.Device mounted on FR-4 PCB with minimum pad
2.Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in² of 2 oz copper
Limits
-50
-32
-5
-1
-2
310 (Note 1)
500 (Note 2)
403 (Note 1)
250 (Note 2)
-55~+150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-40
-
BVCEO
-32
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat) 1
-
-
*VCE(sat) 2
-
-
*VCE(sat) 3
-
-
*VBE(sat)
-
-
*VBE(on)
-
-
*hFE 1
180
-
*hFE 2
100
-
*hFE 3
80
-
*hFE 4
30
-
fT
100
200
Cob
-
12
Max.
-
-
-
-100
-100
-0.25
-0.30
-0.65
-1.2
-1.1
420
-
-
-
-
25
Unit
V
V
V
nA
nA
V
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-30V
VEB=-4V
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
VCE=-2V, IC=-1A
VCE=-3V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTB1197N3
CYStek Product Specification