BTB1188AM3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C812M3-A
Issued Date : 2011.02.17
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
30.4
208
125
Unit
°C/W
°C/W
°C/W
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100pF
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*hFE
fT
Cob
Min.
Typ.
-50
-
-40
-
-6
-
-
-
-
-
-
-0.2
-
-0.45
-
-0.65
180
-
-
180
-
20
Max.
-
-
-
-100
-100
-0.4
-0.8
-1
560
-
-
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-6V, IC=0
IC=-700mA, IB=-35mA
IC=-2A, IB=-0.2A
IC=-3A, IB=-0.1A
VCE=-3V, IC=-0.5A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
R
180~390
S
270~560
Ordering Information
Device
BTB1188AM3
Package
SOT-89
(Pb-free lead plating)
Shipping
1000 pcs / Tape & Reel
BTB1188AM3
CYStek Product Specification