BTA684K3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C232K3
Issued Date : 2013.04.03
Revised Date : 2013.12.25
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-80
-60
-7
-1
-2 (Note)
1
125
-55~+150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(ON)
*hFE 1
*hFE 2
fT
Cob
td
tr
tstg
tf
Min.
-80
-60
-7
-
-
-
-
-
-
-
170
90
150
-
-
-
-
-
Typ.
-
-
-
-
-
-116
-100
-177
-0.86
-0.86
-
-
-
-
11
30
205
55
Max.
-
-
-
-100
-100
-200
-180
-340
-1.2
-1
340
-
-
15
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
-
-
MHz
pF
ns
Test Conditions
IC=-100μA
IC=-2mA
IE=-10μA
VCB=-80V
VEB=-7V
IC=-100mA, IB=-1mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-1A
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
VCC=-40V, IC=-500mA,
IB1=-IB2=-25mA
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTA684K3
CYStek Product Specification