BTA1952I3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 2/ 5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-100
-60
-5
-
-
-
-
70
30
-
Typ.
-
-
-
-
-
-0.45
-
-
-
60
Max.
-
-
-
-1
-1
-0.6
-1.2
240
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
Test Conditions
IC=-50μA, IE=0
IC=-10mA, IB=0
IE=-50μA, IC=0
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-3A, IB=-0.15A
IC=-3A, IB=-0.15A
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
VCE=-4V, IC=-1A, f=30MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTA1952I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
A1952
BTA1952I3
CYStek Product Specification