BTA1721N3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2005.06.01
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
fT
Cob
Min.
-300
-300
-5
-
-
-
-
25
52
25
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Classification Of hFE
Max.
-
-
-
-0.25
-0.1
-0.5
-0.9
-
270
-
-
6
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-100µA
VCB=-200V
VEB=-3V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
K
52~120
P
82~180
Q
120~270
Ordering Information
Device
BTA1721N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
2D
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=10V
100
Saturation Voltage vs Collector Current
10000
VCE(SAT)@IC=10IB
1000
100
10
0.1
1
10
100
Collector Current---IC(mA)
BTA1721N3
10
0.1
1
10
100
Collector Current---IC(mA)
CYStek Product Specification