BTA1640T3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657T3
Issued Date : 2011.02.23
Revised Date :2012.06.14
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
Min.
-30
-30
-18
-
-
-
-
-
-
150
60
Typ.
-
-
-
-
-
-
-0.2
-0.42
-
-
-
Max.
-
-
-
-10
-100
-100
-0.4
-0.7
-1.2
400
-
Unit
Test Conditions
V
IC=-10mA, IB=0
V
IC=-1mA, IE=0
V
IE=-1mA, IC=0
μA VCE=-30V, IB=0
nA VCB=-30V, IB=0
nA VEB=-15V, IC=0
V
IC=-3A, IB=-100mA
V
IC=-5A, IB=-100mA
V
IC=-3A, IB=-100mA
-
VCE=-2V, IC=-500mA
-
VCE=-2V, IC=-4A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 1
Rank
Range
A
150~300
B
200~400
Ordering Information
Device
BTA1640T3
Package
TO-126
(RoHS compliant)
Shipping
200 pcs / bag, 10 bags/box, 10 boxes/carton
Marking
A1640
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=2V
100
VCE=1V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
1000
Saturation Voltage vs Collector Current
VCE(SAT)
100
10
1
IC=100IB
IC=50IB
10
100
1000
Collector Current---IC(mA)
10000
BTA1640T3
CYStek Product Specification