BTA1640FP Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657FP
Issued Date : 2004.09.01
Revised Date :2004.09.28
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
Min.
-30
-30
-5
-
-
-
-
-
120
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-10mA, IB=0
-
-
V
IC=-1mA, IE=0
-
-
V
IE=-1mA, IC=0
-
-50
µA VCE=-30V, IB=0
-
-10
µA VCB=-30V, IB=0
-
-10
µA VEB=-5V, IC=0
-
-0.4
V
IC=-3A, IB=-100mA
-
-1
V
IC=-3A, IB=-100mA
-
300
-
VCE=-2V, IC=-500mA
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=2V
100
VCE=1V
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
100
IC=30IB
IC=50IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=50IB
1000
100
1
BTA1640FP
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
Grounded Emitter Output Characteristics
4000
3500
20mA
3000
2500
2000
1500
1000
500
0
0
10mA
6mA
2mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
CYStek Product Specification