BTA1505E3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C655E3
Issued Date : 2016.01.28
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Opeearting Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
RθJC
Tj
Tstg
Limits
-150
-150
-5
-5
-10 (Note 1)
2
20
62.5
6.2
-55~+150
-55~+150
Unit
V
A
W
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
VFEC
Cob
Min.
-150
-150
-
-
-
-
-
-
-
-
1000
1000
1000
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-100
-1
-2
-1.2
-1.5
-2.5
-2.3
-2.5
-
-
-
-2
200
Unit
Test Conditions
V
IC=-1mA, IB=0
IC=-100μA, IE=0
nA VCB=-150V, IE=0
μA VCE=-150V, IB=0
mA VEB=-5V, IC=0
IC=-2A, IB=-2mA
V
IC=-3A, IB=-12mA
IC=-4A, IB=-20mA
IC=-3A, IB=-12mA
VCE=-3V, IC=-3A
-
VCE=-3V, IC=-500mA
-
VCE=-3V, IC=-1A
-
VCE=-3V, IC=-3A
V
IC=-4A
pF VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTA1505E3
CYStek Product Specification