BTA1210E3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C656E3
Issued Date : 2004.06.03
Revised Date :
Page No. : 2/4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
-120
-120
-5
-10
-15 (Note )
2
65
62.5
1.92
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-120
-120
-5
-
-
-
-
-
-
1
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-200
-200
-2
-2
-4
-4.5
-2.8
12
-
300
Unit
Test Conditions
V
IC=-1mA, IB=0
V
IC=-100µA, IE=0
V
IE=-1mA, IC=0
µA VCB=-120V, IE=0
µA VCE=-120V, IB=0
mA VEB=-5V, IC=0
V
IC=-4A, IB=-16mA
V
IC=-8A, IB=-80mA
V
IC=-8A, IB=-80mA
V
VCE=-4V, IC=-4A
K
VCE=-4V, IC=-4A
-
VCE=-4V, IC=-8A
pF VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTA1210E3
CYStek Product Specification