BTA1020K3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-80
-50
-7
-2
-5 (Note)
900
139
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
-80
-50
-7
-
-
-
-
-
120
70
-
-
Typ.
-
-
-
-
-
-43
-215
-0.88
-
-
110
18
Max.
-
-
-
-100
-100
-80
-350
-1.2
240
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
-
-
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-10μA
VCB=-80V
VEB=-7V
IC=-100mA, IB=-5mA
IC=-1A, IB=-50mA
IC=-1A, IB=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1.5A
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTA1020K3
CYStek Product Specification