BTA1013K3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C233K3
Issued Date : 2013.05.09
Revised Date : 2013.12.25
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-160
-160
-7
-1
-2 (Note)
0.9
139
-55~+150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(ON)
*hFE 1
*hFE 2
fT
Cob
Min.
-160
-160
-7
-
-
-
-
-
-
-0.45
90
100
50
-
Typ.
-
-
-
-
-
-60
-140
-387
-0.83
-
-
-
-
13
Max.
-
-
-
-100
-100
-100
-300
-750
-1.2
-0.75
-
200
-
20
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
-
-
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-10μA
VCB=-160V
VEB=-7V
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-5mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-200mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTA1013K3
CYStek Product Specification