BC807N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C905N3
Issued Date : 2003.07.29
Revised Date : 2005.05.10
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
-
V
IC=-10µA
*BVCEO
-45
-
-
V
IC=-10mA
BVEBO
-5
-
-
V
IE=-10µA
ICBO
-
-
-100
nA VCB=-20V
IEBO
-
-
-100
nA VEB=-5V
*VCE(sat)
-
-0.5
-0.7
V
IC=-500mA, IB=-50mA
*VBE(on)
-
-
-1.2
V
VCE=-1V, IC=-500mA
*hFE 1
100
-
600
-
VCE=-1V, IC=-100mA
*hFE
40
-
-
-
VCE=-1V, IC=-500mA
fT
80
-
-
MHz VCE=-5V, IC=-10mA, f=100MHz
Cob
-
9
-
pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1:
Rank
Range
16
100--250
25
160--400
40
250--600
BC807N3
CYStek Product Specification