BC327-40A3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-500
mA
Peak Collector Current
ICM
-1
A
Peak Base Current
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
IBM
-200
mA
625
mW
PD
1.5
W
Operating Junction and Storage Temperature Range Tj ; Tstg
-55~+150
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
83.3
200
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VBE(on)
*hFE
*hFE
fT
Cob
Min.
-50
-45
-5
-
-
-
-
-
250
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
180
16
Max.
-
-
-
-100
-100
-100
-700
-1.2
600
-
-
25
Unit
V
V
V
nA
nA
nA
mV
V
-
-
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-10μA
VCB=-50V
VCE=-45V
VEB=-5V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
VCE=-5V, IE=-10mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BC327-40A3
CYStek Product Specification