BAS70AS3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Small Signal Schottky (double) diodes

CYStech Electronics Corp.
Absolute Maximum Ratings
Symbol Parameter
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
Ptot
total power dissipation (per package)
Tstg
storage temperature
Tamb operating ambient temperature
Conditions
tp≤1s, δ≤0.5
Tamb≤25℃
Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
Page No. : 2/6
Min Max Unit
-
70 V
-
70 mA
- 100 mA
- 200 mW
-65 +150 ℃
-55 +125 ℃
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Condition
Min. Max. Unit
Reverse Breakdown Voltage
VBR
IR=10μA
70
-
V
Forward Voltage (Note 1)
VF(1)
VF(2)
IF=1mA
IF=15mA
-
410 mV
-
1000 mV
Reverse Leakage Current (Note 1)
IR
VR=50V
-
100 nA
Diode Capacitance
Reverse Recovery Time
CD
VR=0V, f=1MHz
-
when switched from IF= 10mA
trr
to IR=10mA; RL=100Ω;
-
measured at IR=1mA
2
pF
5
ns
Notes: 1.pulse test, tp=300μs, duty cycle<2%.
Thermal Characteristics
Symbol
Rth j-a
Parameter
thermal resistance from junction to ambient
Note 1 : Refer to SOT-323 standard mounting conditions.
Conditions
note 1
Value
Unit
625
K/W
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3
CYStek Product Specification