BAS21S2 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High voltage switching diode

CYStech Electronics Corp.
Spec. No. : C335S2
Issued Date : 2003.06.10
Revised Date :
Page No. : 2/4
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -55~+150 °C
Junction Temperature Tj ............................................................................................................. +150 °C
• Maximum Power Dissipation
Total Power Dissipation Ptot (Note)........................................................................................... 200 mW
Derate above 25℃ ……………………………………………………………………….. 1.57mW/℃
• Maximum Voltages and Currents
Continuous Reverse Voltage VR…………………………………………………………………… 250V
Continuous Forward Current IF (Note)…………………………………………………………… 200 mA
Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA
• Thermal Resistance, Junction to Ambient Air RθJA……………………………………….…….635℃/W
Note : Parts mounted on FR-5 board with minimum pad.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note)
Reverse Leakage Current (Note)
Diode Capacitance
Reverse Recovery Time
Symbol
VBR
VF(1)
VF(2)
IR(1)
IR(2)
CD
trr
Condition
IR=100µA
IF=100mA
IF=200mA
VR=200V,Tj=25℃
VR=200V,Tj=150℃
VR=0V, f=1MHz
IF=IR=30mA RL=100Ω
measured at IR=3mA
Min. Max. Unit
250
-
V
-
1
V
- 1.25 V
-
100 nA
100 µA
-
5
pF
-
50
ns
Notes: Pulse test, tp=380µs, duty cycle<2%.
BAS21S2
CYStek Product Specification