TIP50I3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – High Voltage NPN Power Transistor

CYStech Electronics Corp.
High Voltage NPN Power Transistor
TIP50I3
BVCEO
IC
RCESAT
Spec. No. : C827I3
Issued Date : 2013.01.04
Revised Date :
Page No. : 1/6
400V
1.5A
500mΩ(max.)
Features
• High breakdown voltage, VCEO=400V (min.)
• High collector current, IC(max)=1.5A (DC)
• Pb-free lead plating package
Symbol
TIP50I3
Outline
TO-251AB
TO-251S
B：Base
C：Collector
E：Emitter
B CE
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 5ms
TIP50I3
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
RθJA
RθJC
Tj
Tstg
Limits
700
400
9
1.5
3 (Note)
0.5
1.5 (Note)
1
15
125
8.33
150
-65~+150
Unit
V
A
W
°C/W
°C
°C
CYStek Product Specification