TIP31CE3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – 3A NPN Epitaxial Planar Power Transistor

CYStech Electronics Corp.
3A NPN Epitaxial Planar Power Transistor
TIP31CE3
Spec. No. : C609E3
Issued Date : 2003.09.04
Revised Date :
Page No. : 1/4
Description
TIP31CE3 is designed for use in general purpose amplifier and switching applications.
Features
• Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A
• High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)
• High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA
Symbol
TIP31CE3
Outline
TO-220AB
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
TIP31CE3
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
BCE
Limits
100
100
5
3
5 (Note 1)
1
2
40
62.5
3.125
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification