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SK3XSB Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – 3.0Amp. Surface Mount Schottky Barrier Diodes | |||
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CYStech Electronics Corp.
3.0Amp. Surface Mount Schottky Barrier Diodes
SK32SB thru SK3BSB
Spec. No. : C330SB
Issued Date : 2003.04.09
Revised Date :2011.01.28
Page No. : 1/6
Features
⢠For surface mounted applications.
⢠For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
⢠Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0.
⢠Low leakage current.
⢠High surge capability.
⢠High temperature soldering: 250°C/10 seconds at terminals.
⢠Exceeds environmental standards of MIL-S-19500/228.
Mechanical Data
⢠Case: Molded plastic, JEDEC DO-214AA/SMB.
⢠Terminals: Solder plated, solderable per MIL-STD-750 method 2026.
⢠Polarity: Indicated by cathode band.
⢠Mounting position: Any.
⢠Weight: 0.093 gram.
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise specified. )
Parameter
Conditions
Symbols
SK32
SB
SK33
SB
SK34
SB
SK36
SB
SK3B
SB
Units
Repetitive peak reverse
voltage
VRRM 20 30 40 60 100 V
Maximum RMS voltage
VRMS 14 21 28 42 70 V
Maximum DC blocking
voltage
VR 20 30 40 60 100 V
Maximum instantaneous
forward voltage
IF=3A (Note 1)
VF 0.475 0.5 0.5 0.7 0.85 V
Maximum average forward
rectified current
IO
3
A
8.3ms single half sine wave
Peak forward surge current superimposed on rated
IFSM
100
A
load (JEDEC method)
Maximum DC reverse current VR=VRRM,TA=25â(Note 1)
VR=VRRM,TA=125â(Note 1)
IR
0.5
mA
20
mA
Maximum thermal resistance,
Junction to ambient (Note 2)
Rth,JA
40 (typ)
â/W
Diode junction capacitance
f=1MHz and applied 4V
reverse voltage
CJ
50 (typ)
pF
Storage temperature
Tstg
-65~+150
â
Operating temperature
TJ
-55~+125
-55~+150 â
Notes : 1.Pulse test, pulse width=300μsec, 2% duty cycle
2.Mounted on PCB with 0.2âÃ0.2âmm² (0.5mmÃ0.5mm) copper pad area.
SK32SB thru SK3BSB
CYStek Product Specification
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