PZT5551L3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208L3
Issued Date : 2004.09.21
Revised Date : 2008.07.04
Page No. : 1/5
PZT5551L3
Description
The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514L3
• Pb-free package
Symbol
PZT5551L3
Outline
SOT-223
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation@TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
PZT5551L3
BCE
Limits
180
160
6
600
5
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
CYStek Product Specification