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MTS2072G6 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – MTS2072G6 CYStek Product Specification | |||
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CYStech Electronics Corp.
Spec. No. : C879G6
Issued Date : 2012.10.09
Revised Date :
Page No. : 1/13
Dual N-Channel Enhancement Mode MOSFET
MTS2072G6
BVDSS
ID
RDSON(TYP.)
Tr1(N-CH)
60V
0.53A(VGS=10V)
1.2Ω(VGS=10V)
1.6Ω(VGS=4.5V)
Tr2(N-CH)
30V
5.6A(VGS=10 V)
16.6mΩ(VGS=10V)
24.7mΩ(VGS=4.5V)
Description
The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
⢠Simple drive requirement
⢠Low gate charge
⢠Low on-resistance
⢠Fast switching speed
⢠Pb-free lead plating and halogen-free package
Equivalent Circuit
MTS2072G6
Outline
TSOP-6
S2
G2
D1
Gï¼Gate
Sï¼Source
Dï¼Drain
Pin 1
D2
S1
G1
MTS2072G6
CYStek Product Specification
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