MTP9435L3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C400L3
Issued Date : 2009.06.22
Revised Date :
Page No. : 1/7
P-Channel Enhancement Mode Power MOSFET
MTP9435L3
Features
• Simple Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
BVDSS
RDSON(MAX)
ID
-30V
60mΩ
-6A
Symbol
MTP9435L3
Outline
SOT-223
D
G：Gate
D：Drain
S：Source
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25°C
ID
-6.0 *1
A
Continuous Drain Current @ TA=70°C
ID
-4.8 *1
A
Pulsed Drain Current
IDM
-20 *1
A
Total Power Dissipation (TA=25℃)
Pd
2.7
W
Linear Derating Factor
0.02
W/°C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
45 *2
°C/W
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad
MTP9435L3
CYStek Product Specification