MTP6679J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C419J3
Issued Date : 2007.09.21
Revised Date : 2009.02.04
Page No. : 1/7
P-Channel Enhancement Mode Power MOSFET
MTP6679J3
BVDSS
ID
RDSON
-30V
-50A
10mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• RoHS compliant package
Symbol
MTP6679J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
-30
±25
-50
-35
-180 *1
89
0.71
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
MTP6679J3
CYStek Product Specification