MTP658G6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTP658G6
BVDSS
ID
RDSON@VGS=-10V, ID=-5A
RDSON@VGS=-4.5V, ID=-3.7A
RDSON@VGS=-4V, ID=-3A
RDSON@VGS=-3V, ID=-1.5A
-30V
-5.2A
39mΩ(typ.)
61mΩ(typ.)
69mΩ(typ.)
116mΩ(typ.)
Description
The MTP658G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
Equivalent Circuit
MTP658G6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current @VGS=-4.5V, TA=25 °C (Note 1)
ID
-5.2
Continuous Drain Current @ VGS=-4.5V, TA=70 °C (Note 1)
ID
-4.2
Pulsed Drain Current (Note 2, 3)
IDM
-30
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
1.6
0.013
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
RθJA
78
Thermal Resistance, Junction-to-Case
RθJC
25
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
MTP658G6
CYStek Product Specification