MTP6405N6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C386N6
Issued Date : 2013.08.19
Revised Date : 2013.09.06
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP6405N6 BVDSS
ID
RDSON(MAX)@VGS=-10V, ID=-5A
RDSON(MAX)@VGS=-4.5V, ID=-4A
-30V
-6.5A
24mΩ(typ.)
34mΩ(typ.)
Description
The MTP6405N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
Equivalent Circuit
MTP6405N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol Limits Unit
VDS
-30
V
VGS
±20
-8.2
-6.6
ID
-6.5
A
-5.2
IDM
-30
3.2
2.1
PD
W
2
1.25
Tj, Tstg -55~+150 °C
MTP6405N6
CYStek Product Specification