MTP5210F3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTP5210F3
BVDSS
ID
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-18A
-100V
-34A
37mΩ
42mΩ
Symbol
MTP5210F3
Outline
TO-263
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-100
V
VGS
±20
Continuous Drain Current @ TC=25°C, VGS=-10V
ID
-34
Continuous Drain Current @ TC=100°C, VGS=-10V
ID
Pulsed Drain Current
(Note 1)
IDM
-21
A
-130
Avalanche Current
IAS
-20
Avalanche Energy @ L=1mH, ID=-20A, RG=25Ω
EAS
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
EAR
200
mJ
10
Power Dissipation
TC=25°C
TC=100°C
100
PD
W
40
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTP5210F3
CYStek Product Specification