MTP5103N3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C400N3
Issued Date : 2011.11.28
Revised Date : 2014.01.17
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTP5103N3
BVDSS
ID
RDSON(TYP)
VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-3.5A
-30V
-4.5A
41mΩ
60mΩ
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP5103N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTP5103N3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP5103N3
CYStek Product Specification