MTP4835L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C830L3
Issued Date : 2013.02.01
Revised Date :
Page No. : 1/8
P-Channel Logic Level Enhancement Mode Power MOSFET
MTP4835L3
BVDSS
ID
RDSON@VGS=-10V, ID=-10A
RDSON@VGS=-5V, ID=-7A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
-30V
-10A
21mΩ (typ)
28mΩ (typ)
Equivalent Circuit
MTP4835L3
Outline
SOT-223
D
G：Gate D：Drain
S：Source
S
D
G
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TC=25°C
Continuous Drain Current @ VGS=-10V, TC=100°C
Continuous Drain Current @ VGS=-10V, TA=25°C
Continuous Drain Current @ VGS=-10V, TA=70°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTP4835L3
Limits
Unit
-30
±25
V
-13
-9.2
-10
A
-8.4
-40
-10
5
mJ
2.5
3.3
W
1.65
-55~+175
°C
CYStek Product Specification