MTP452M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
MTP452M3
Spec. No. : C426M3
Issued Date : 2012.02.07
Revised Date :
Page No. : 1/8
Features
• Single Drive Requirement
• Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A
RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A
• Ultra High Speed Switching
• Pb-free package
Symbol
MTP452M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
VGS
±20
V
ID
-5.3
A
ID
-4.2
A
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
IDM
-20 *1, 3
A
2 *2
PD
W
1.3 *2
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
MTP452M3
CYStek Product Specification