MTP4435BV8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C107V8
Issued Date : 2016.02.17
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP4435BV8
BVDSS
ID@ VGS=-10V, TA=25°C
ID@ VGS=-10V, TC=25°C
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
RDSON@VGS=-10V, ID=-10A
RDSON@VGS=-5V, ID=-7A
-30V
-10.5A
-32.4A
12.6mΩ(typ.)
16.9mΩ(typ.)
Equivalent Circuit
MTP4435BV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
MTP4435BV8-0-T6-G
DFN3×3
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTP4435BV8
CYStek Product Specification