MTP4411M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – -30V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C400M3
Issued Date : 2011.10.06
Revised Date : 2013.08.07
Page No. : 1/8
-30V P-CHANNEL Enhancement Mode MOSFET
MTP4411M3
BVDSS
ID
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-3A
-30V
-5A
40mΩ (typ.)
58mΩ (typ.)
Features
• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free lead plating package
Symbol
MTP4411M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
VGS
±20
ID
-5
ID
-4
IDM
-20 *1, 3
Pd
1.5 *2
Linear Derating Factor
0.01
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 250 °C/W when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
Unit
V
V
A
A
A
W
W/°C
°C
MTP4411M3
CYStek Product Specification