MTP425I3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C391I3
Issued Date : 2012.11.27
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTP425I3
Features
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-7A
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
-30V
-50A
10mΩ(typ)
14mΩ(typ)
Symbol
MTP425I3
Outline
TO-251AB
TO-251S
G：Gate
D：Drain
S：Source
G DS
GD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=100°C
Pulsed Drain Current
TC=25℃
Power Dissipation
TC=100℃
TA=25℃
TA=100℃
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
MTP425I3
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAS
Tj, Tstg
Limits
Unit
-30
V
±25
-50
-32
-11
A
-7
-100 *1
50 *4
20 *4
W
2.5
1.0
30 *2
mJ
-11
A
-55~+150
°C
CYStek Product Specification