MTP4151N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – -20V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C565N3
Issued Date : 2012.07.27
Revised Date :
Page No. : 1/ 8
-20V P-Channel Enhancement Mode MOSFET
MTP4151N3
BVDSS
ID
RDSON@VGS=-4.5V, ID=-350mA
RDSON@VGS=-2.5V, ID=-300mA
RDSON@VGS=-1.8V, ID=-150mA
Features
• Very low level gate drive requirements allowing direct operation in 3V circuits.
• Compact industrial standard SOT-23 surface mount package.
• Pb-free package.
-20V
-830mA
0.3Ω(typ)
0.46Ω(typ)
0.67Ω(typ)
Equivalent Circuit
MTP4151N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Continuous Drain Current @ TA=70°C, VGS=-4.5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
Limits
-20
±8
-0.83
-0.66
-4
350
357
-55~+150
Unit
V
A
mW
°C/W
°C
MTP4151N3
CYStek Product Specification