MTP405J3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTP405J3
Spec. No. : C392J3
Issued Date : 2007.06.08
Revised Date :
Page No. : 1/6
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free package
Symbol
MTP405J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
*2 . Tj=25°C, VDD=25V, L=0.1mH, RG=25Ω
MTP405J3
Symbol
VDS
VGS
ID
ID
IDM
Pd
EAS
IAS
Tj, Tstg
Limits
-30
±20
-18
-14
-40 *1
60
0.4
61 *2
-35
-55~+175
Unit
V
V
A
A
A
W
W/°C
mJ
A
°C
CYStek Product Specification