MTP3LP01Y3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : 794Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 1/ 8
30V P-CHANNEL Enhancement Mode MOSFET
MTP3LP01Y3
Features
• Ultra high speed switching.
• Low gate charge.
• 2.5V drive.
• Pb-free package lead plating and halogen-free package.
BVDSS
ID
RDSON(typ)
-30V
-230mA
3Ω@-4V
4.6Ω@-2.5V
10.9Ω@-1.5V
Equivalent Circuit
MTP3LP01Y3
Outline
SOT-723
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation (Note 2)
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤1%.
2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.
Limits
-30
±10
-230
-920
150
833
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
MTP3LP01Y3
CYStek Product Specification