MTP3J15Y3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 50V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
50V P-CHANNEL Enhancement Mode MOSFET
MTP3J15Y3
BVDSS
ID
RDSON@-10V
RDSON@-5V
RDSON@-4V
Features
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
RDSON@-2.5V
Spec. No. : C465Y3
Issued Date : 2012.04.13
Revised Date : 2012.05.19
Page No. : 1/ 8
-50V
-130mA
8Ω (MAX)
10Ω (MAX)
12Ω (MAX)
32Ω (MAX)
Equivalent Circuit
MTP3J15Y3
Outline
SOT-723
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-10V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃ (Note 2)
Thermal Resistance, Junction-to-Ambient (Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Limits
-50
±20
-130
-520
150
833
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
MTP3J15Y3
CYStek Product Specification