MTP3J15N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 50V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 1/ 8
50V P-CHANNEL Enhancement Mode MOSFET
MTP3J15N3
BVDSS
ID
RDSON@VGS=-10V, ID=-100mA
RDSON@VGS=-5V, ID=-100mA
-50V
-130mA
4.5Ω(typ)
6Ω(typ)
Features
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free package
Equivalent Circuit
MTP3J15N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purpose, 10 s
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
TL
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
Limits
-50
±20
-130
-520
225
556
260
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
MTP3J15N3
CYStek Product Specification