MTP3403KN3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode MOSFET
MTP3403KN3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-2.5A
RDS(ON)@VGS=-4.5V, ID=-1.35A
RDS(ON)@VGS=-4V, ID=-1.35A
-30V
-3.3A
63mΩ(typ)
100mΩ(typ)
114mΩ(typ)
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Low gate charge
• Compact and low profile SOT-23 package
• Pb-free & Halogen-free package
Equivalent Circuit
MTP3403KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TA=25°C (Note 1)
Continuous Drain Current @VGS=-10V, TA=70°C (Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
-30
±20
-3.3
-2.6
-15
1.25
0.01
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 270°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
MTP3403KN3
CYStek Product Specification