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MTP3001N3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP3001N3
Spec. No. : C400N3
Issued Date : 2006.10.17
Revised Date :
Page No. : 1/5
Description
The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with
the best combination of fast switching, ruggedized device design, low on-resistance and cost
effectiveness.
Features
⢠RDS(ON)=50mΩ@VGS=-10V, ID=-5.3A
RDS(ON)=75mΩ@VGS=-4.5V, ID=-4.2A
⢠Simple drive requirement
⢠Low on-resistance
⢠Fast switching speed
⢠Pb-free package
Applications
⢠Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTP3001N3
Outline
SOT-23
D
Gï¼Gate
Sï¼Source
Dï¼Drain
S
G
MTP3001N3
CYStek Product Specification
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