MTP2955L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTP2955L3
BVDSS
ID
Features
• Simple Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
RDSON@VGS=-10V, ID=-2.4A
RDSON@VGS=-10V, ID=-1.5A
RDSON@VGS=-10V, ID=-0.75A
RDSON@VGS=-4.5V, ID=-1.7A
-60V
-4.8A
75mΩ (typ.)
74mΩ (typ.)
70mΩ (typ.)
99mΩ (typ.)
Symbol
MTP2955L3
Outline
SOT-223
D
G：Gate
D：Drain
S：Source
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25°C
ID
-4.8 *1
A
Continuous Drain Current @ TA=70°C
ID
-3.8 *1
A
Pulsed Drain Current
IDM
-20 *1
A
Total Power Dissipation (TA=25℃)
Pd
2.7 *2
W
Linear Derating Factor
0.02
W/°C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad
MTP2955L3
CYStek Product Specification