MTP2603N6 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2603N6
Spec. No. : C394N6
Issued Date : 2007.12.28
Revised Date :
Page No. : 1/5
Description
The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free package
Equivalent Circuit
MTP2603N6
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±12
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
ID
-5
ID
-4
Pulsed Drain Current (Note 2, 3)
IDM
-20
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
2
0.016
Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
MTP2603N6
CYStek Product Specification