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MTP2603G6 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2603G6
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 1/5
Description
The MTP2603G6 is a P-channel enhancement-mode MOSFET, providing the designer with
the best combination of fast switching, ruggedized device design, low on-resistance and cost
effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount
applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free package
Equivalent Circuit
MTP2603G6
G:Gate
S:Source
D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current @TA=25 °C (Note 1)
ID
-5
A
Continuous Drain Current @TA=70 °C (Note 1)
ID
-4
A
Pulsed Drain Current (Note 2, 3)
IDM
-20
A
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
2
W
0.016
W / °C
Operating Junction Temperature
Tj
-55~+150
°C
Storage Temperature
Tstg
-55~+150
°C
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
62.5
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTP2603Q6
CYStek Product Specification