MTP2317N3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C566N3
Issued Date : 2012.04.12
Revised Date : 2014.01.14
Page No. : 1/9
20V P-CHANNEL Enhancement Mode MOSFET
MTP2317N3
BVDSS
ID
RDSON@VGS=-4.5V, ID=-4.5A
RDSON@VGS=-2.5V, ID=-2.5A
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
RDSON@VGS=-1.8V, ID=-2A
-20V
-5.8A
28mΩ(typ.)
35mΩ(typ.)
51mΩ(typ.)
Equivalent Circuit
MTP2317N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTP2317N3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2317N3
CYStek Product Specification